It is the world’s best diffusion barrier that prevents oxidation and metal migration in circuits. My fusion process is the only process in the world that can use 2D Graphene for circuit interconnects ...

In recent years, gallium nitride (GaN) has emerged as a compelling candidate to complement the silicon material used in wireless communication and power conversion applications. Benefits of GaN ...

The PCA2000 and PCA2001 are CMOS integrated circuits for battery operated wrist watches with a 32 kHz quartz crystal as timing element and a bipolar 1 Hz stepping motor. The quartz crystal oscillator ...

“The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a major goal of semiconductor industry for the next decade, as it may allow the extension of the Moore’s law, ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...

Research paper titled “CMOS Interface Circuits for High-Voltage Automotive Signals” from University of Parma and Silis s.r.l. “The acquisition of high-voltage signals from sensors and actuators in an ...

To make stretchable electronics, engineers must start with materials that can tolerate strain. That’s why the ability to endure being stretched is a sought-after quality in flexible electronics, ...

MEMS are primarily transducer systems that can control or sense chemical, optical, or physical quantities, such as fluids, acceleration, or radiation. A MEMS device/transducer possesses an electrical ...

The effects of cosmic rays were once discussed in “Doubled-up MOSFETs“. The idea was that component redundancy, paired MOSFETs in that case, would allow one MOSFET to still function even if its ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...