At room temperature, a single gate contacted n-FinFET RF device exhibits a cutoff and maximum ... To the authors’ knowledge, an iteration free approach to develop a model-card for RF applications is ...
Another advantage of SOI over FinFET is, that it has good back gate bias option. By creating back gate region below BOX, we can also control V t. This make it suitable for low power applications. The ...
The 14nm FinFET Phy IP Core is designed for chips implementing high bandwidth data communication (support USB3, PCIe3 and SATA3) for applications such as 5G, AI (Artificial Intelligence), IoT ...
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