The new extra fast soft recovery diodes are diodes capable of operating at high commutation rates. It has low reverse recovery current and is outstanding in their dynamic characteristics. In this ...

Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as well as to decrease turn-off energy. In switching inductive loads, the turn-on ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer ...

Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

Infineon Technologies AG recently launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. Infineon Technologies AG recently launched a 6.5 ...

Monolithic bidirectional 1200 V GaN switches (MBDS) with integrated free-wheeling diodes, manufactured at Fraunhofer IAF in a multi-project wafer run using GaN-on-insulator technology ...