GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, announced the publication of its latest white paper titled The Fundamental ...
Members can download this article in PDF format. High efficiency and high power density are critical characteristics when designing power supplies for today’s products. To achieve these goals, ...
Commercial GaN power devices can’t handle voltages above about 600 volts, however, which limits their use. “Virtually all commercially available GaN power semiconductors are lateral devices,” says ...
New technical paper “Laser slice thinning of GaN-on-GaN high electron mobility transistors” from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, ...
LOS GATOS, Calif. - Atomera Incorporated (NASDAQ:ATOM) announced Tuesday that its concept paper on Gallium Nitride on Silicon (GaN-on-Si) technologies has advanced to the proposal stage in a ...
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