NoMIS Power Corp. has claimed significant reductions in on-resistance for its next-generation platform of 1.2-kV planar SiC MOSFETs. This was achieved by optimizing device design and process steps, ...

ALBANY, N.Y., May 1, 2025 /PRNewswire/ -- NoMIS Power has announced a key advancement in its next-generation 1.2 kV planar SiC MOSFET platform, achieving substantial reductions in on-resistance by ...

This next-generation XbloX platform looks to advance Silicon Carbide (SiC) process technology for power MOSFETs, and delivers significantly reduced cell pitch, enabling increased die per wafer and ...

X-FAB Silicon Foundries, the analogue/mixed-signal specialty foundry, has upgraded its XbloX platform, advancing SiC process technology for power MOSFETs, delivering reduced cell pitch, enabling ...

Selected from a total of 230 contributions, it focuses on next-generation silicon-carbide (SiC) planar MOSFETs, trench structure Schottky diodes, and trench MOSFETs. PCIM Europe 2012 Nuremberg: PCIM ...

Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...

ROHM is now mass-producing the industry’s first trench-type SiC MOSFET. Utilizing a proprietary trench structure, the process results in improved switching performance (approx. 35% lower input ...

ALBANY, N.Y., Sept. 8, 2025 /PRNewswire/ --NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced the commercial release of its first 3.3 ...

Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...