Tokyo – Renesas Technology Corp. has developed a new SRAM memory cell structure that combines SRAM and DRAM technologies. The device is about half the size of a conventional SRAM cell, but still has ...

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

TOKYO — Fabless startup Silicon7 Inc. said it has developed a one-transistor SRAM chip that can replace today's six-transistor SRAMs. The chip combines Silicon7's CompactCell SRAM (CCSRAM) technology ...

Last week at the IEEE International Solid State Circuits Conference, two of the biggest rivals in advanced chipmaking, Intel ...

Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each ...

In this post, we are going to explain the differences between SRAM and DRAM. These are types of RAM (Random Access Memory) which is an internal memory of a computer. Now, if you are curious about ...

Low power Static Random-Access Memory (SRAM) design remains at the forefront of research in modern electronics due to its critical role in minimising energy consumption while maintaining high ...

Toted as the industry's highest density SRAM devices, the 72 Mb no bus latency (NoBL) burst SRAM family employ a patented one-transistor enhanced SRAM technology to achieve the same speed, four times ...

The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...