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⚡ An excess of current erases memory

Spin-Orbit Torque magnetic memory (SOT-MRAM) is the only non-volatile memory technology fast enough to be used closest to the ...
EDN

Memory lane: Where SOT-MRAM technology stands in 2024

Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
Hosted on MSN

World's lowest write power operation for high-speed SOT-MRAM cell achieved

Researchers at the Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, have achieved the world's lowest write power for a specific type of memory storage device. Not only ...
Electronics Weekly

SOT-MRAM could replace last-level cache

Imec’s extremely scaled spin-orbit transfer MRAM (SOT-MRAM) devices have achieved record performances of a switching energy below 100 femto-Joule per bit and endurance of more than 10 to the power of ...
Design-Reuse

Imec's extremely scaled SOT-MRAM devices show record low switching energy and virtually unlimited endurance

Scaling the spin-orbit transfer (SOT) track as a critical step towards SOT-MRAM for cache memory applications LEUVEN (Belgium), December 13, 2023— This week, at the 2023 International Electron Devices ...
For Construction Pros

SOT (Sold Out of Trust) -- A Dangerous Practice

One of the biggest problems our banks are encountering during these tough economic times is rental business owners selling equipment out of trust (SOT). By definition, SOT means the rental business ...
EDN

Input Rectifiers in SOT-227B Minibloc Packages

IXYS Corporation has expanded its portfolio for Input Rectifiers in SOT-227B Minibloc packages. The Rectifier SOT-227B Minibloc package family belongs to the IXYS product range of high performance ...