What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
When looking across the discrete components in your electronic armory, it is easy to overlook the humble diode. After all, one can be forgiven for the conclusion that the everyday version of this ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
Today's spacecraft subsystems require an increasing number of power rails and supply distributions with loads ranging from milliamps to tens of amps. It is important to choose the appropriate solution ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap ...
This file type includes high-resolution graphics and schematics when applicable. Power efficiency is a fundamental characteristic of any switch-mode power supply (SMPS), and its measure generally ...
Most circuit designers are familiar with diode dynamic characteristics, such as charge storage, voltage-dependent capacitance, and reverse recovery time. Manufacturers less commonly acknowledge and ...
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