Editor’s note: We bring you Chapter 5: Buck Converters of”GaN Transistors for Efficient Power Conversion,” published by Power Conversion Publications. The authors delve into various buck converter ...
Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
As the world’s demand for data increases seemingly out of control, a real problem occurs in the data communications systems that have to handle this traffic. Datacenters and base stations, filled with ...
The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 60 W, ...
Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability ...
EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...
Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be ...
We have been looking at the history of some HVDC devices such as the mercury-arc valve and the thyristor valve for the past few months. The mercury-arc valve made HVDC transmission possible (1950s), ...
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