* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please …

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Jan 12, 2019 · The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers …

Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. Manufacturer: STMicroelectronics.

IRF520 – N-Channel 100 V 10A (Tc) 60W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Nov 25, 2025 · The IRF520 is a widely used N-Channel power MOSFET designed for medium-power switching, PWM motor control, audio circuits, and general power management applications. This …

IRF520 MOSFET PDF Datasheet: N-Ch/100V/9.2A. View the complete specification, pin configuration and find equivalents or replacement transistors.

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown …

Nov 29, 2024 · Embodying Vishay's third-generation improvements in Power MOSFET engineering, the IRF520 marries swift switching capabilities with a robust design. This blend achieves not just cost …

Avalanche Rugged Technology Rugged Gate Oxide Technology. Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area. 175 . Operating Temperature Lower Leakage Current : …